Reduced boron diffusion under interstitial injection in fluorine implanted silicon
Point defect injection studies are performed to investigate how fluorine implantation influences the diffusion of boron marker layers in both the vacancy-rich and interstitial-rich regions of the fluorine damage profile. A 185 keV, 2.3?1015 cm?2 F+ implant is made into silicon samples containing mul...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2007.
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| Subjects: | |
| Online Access: | Get fulltext |