Fabrication of MOS-integrated metallic single-electron memories

Fabrication of MOS-integrated metallic single-electron memories

Bibliographic Details
Main Authors:	Pepin, A. (Author), Vieu, C. (Author), Launois, H. (Author), Rosmeulen, M. (Author), Rossum, M. van (Author), Muller, H. O. (Author), Williams, D. (Author), Mizuta, Hiroshi (Author), Nakazato, K. (Author)
Format:	Article
Language:	English
Published:	2000.
Subjects:	Article
Online Access:	Get fulltext

Similar Items

Analysis of multi-phase clocked electron pumps consisting of single-electron transistors
by: Amakawa, S., et al.
Published: (2001)

Single-electron charging phenomena in silicon nanopillars with and without silicon nitride tunnel barriers
by: Pooley, D. M., et al.
Published: (2001)

Design and analysis of high-speed random access memory with Coulomb blockade charge confinement
by: Katayama, K., et al.
Published: (1999)

Nanosilicon for single-electron devices
by: Mizuta, Hiroshi, et al.
Published: (2004)

Memory cell simulation on the nanometer scale
by: Muller, H. -O, et al.
Published: (2000)

Silicon stacked tunnel transistor for high-speed and high-density random access memory gain cell
by: Nakazato, K., et al.
Published: (1999)

Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors
by: Mizuta, Hiroshi, et al.
Published: (2003)

The role of tunnel barriers in Phase-State Low Electron-Number Drive Transistors (PLEDTRs)
by: Mizuta, Hiroshi, et al.
Published: (2001)

Development of an innovative fabrication method for n-MOS to p-MOS tunable single metal gate/high-[kappa] insulator devices for multiple threshold voltage applications
by: Burham, Cynthia Faye
Published: (2011)

Design and Fabrication of Quantum Devices on MOS Two-Dimensional Electron Plane
by: Zhe-Wei Liao, et al.
Published: (2009)

Three-dimensional S-matrix simulation of single-electron resonant tunnelling through random ionised donor states
by: Mizuta, Hiroshi
Published: (1998)

Synthetic Fabrication of Nanoscale MoS2-Based Transition Metal Sulfides
by: Jikang Yuan, et al.
Published: (2010-01-01)

Nanoscale Coulomb blockade memory and logic devices
by: Mizuta, Hiroshi, et al.
Published: (2001)

Fabrication of Si MOS amplifier
by: Huang, Yi Ren, et al.
Published: (1995)

Numerical study of single-electron resonant tunnelling via a few ionised donors in laterally confined resonant tunnelling diodes
by: Mizuta, Hiroshi
Published: (1996)

Characterisation of tunnel barriers in polycrystalline silicon point-contact single-electron transistors
by: Furuta, Y., et al.
Published: (2002)

The Fabrication and Characterization of Metal-Oxide-Silicon(MOS) Tunneling Light-Emitting Diodes
by: I-Cheng Lin, et al.
Published: (2000)

Novel Synthesis and Applications of Metal, Metal Oxides (MOs), and Transition Metal Dichalcogenides (TMDs) for Energy, Sensing, and Memory Applications
by: Pradip Basnet, et al.
Published: (2019-01-01)

Impact of channel constrictions on the formation of multiple tunnel junctions in heavily-doped silicon single electron transistors
by: Manoharan, M., et al.
Published: (2008)

The Future of MOS Memories in Telecommunications
by: Price, Betty
Published: (1980)

New insights in high-energy electron emission and underlying transport physics of nanocrystalline Si
by: Uno, S., et al.
Published: (2003)

Electron microscopy of VLSI MOS devices
by: Roberts, M. C.
Published: (1985)

Fabrication and Characterization Of Ferromagnetic / Normal-metal / Ferromagnetic Single-electron Transistors
by: 江子露
Published: (2013)

Origin of yield problems of single electron devices based on evaporated granular films
by: Muller, H. -O, et al.
Published: (1999)

Tuning Electronic Structure of Single Layer MoS₂ through Defect and Interface Engineering
by: Yin, Kedi, et al.
Published: (2019)

Scaling of single-electron tunneling current through ultrasmall tunnel junction
by: Amakawa, S., et al.
Published: (2000)

Mos : metal oxide semiconductors
by: Adamopoulos, Constantin D
Published: (1974)

Impact of key circuit parameters on signal-to-noise ratio characteristics for the radio-frequency single electron transistors
by: Manoharan, M., et al.
Published: (2008)

Fabrication of Single Electron Transistor
by: Zhi Jia Chen, et al.
Published: (2002)

Switching of Single-Electron Oscillations in Dual-Gated Nanocrystalline Silicon Point-Contact Transistors
by: Khalafalla, Mohammed A H, et al.
Published: (2003)

Characterization and Fabrication of LPD-oxide GaAs MOS
by: Ti-Kai Chao, et al.
Published: (2003)

Fabrication and Electrical Measurement of MoS2 Transistors
by: I-Cheng Lu, et al.
Published: (2013)

Design of New Logic Architectures Utilizing Suspended-gate Single-Electron Transistors
by: Pruvost, B, et al.
Published: (2010)

Voltage-limitation-free analytical single-electron transistor model incorporating the effects of spin-degenerate energy states
by: Pruvost, B, et al.
Published: (2008)

Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K
by: Manoharan, M, et al.
Published: (2008)

Theoretical investigation of electron-phonon interaction in one-dimensional Si quantum dot array interconnected with silicon oxide layers
by: Uno, S., et al.
Published: (2005)

Study of single-charge polarization on a pair of charge qubits integrated onto silicon double single-electron transistor readout
by: Kawata, Y., et al.
Published: (2008)

Artificial atoms and electron puddles : single and double barriers in a silicon MOS system
by: Abusch-Magder, David, 1969-
Published: (2005)

Selective etching in graphene–MoS2 heterostructures for fabricating graphene-contacted MoS2 transistors
by: Zeliang Sun, et al.
Published: (2020-03-01)

Two-dimensional electronic transport and surface electron accumulation in MoS2
by: M. D. Siao, et al.
Published: (2018-04-01)