Lateral SiGe heterojunction bipolar transistor by confined selective epitaxial growth: simulation and material growth
A new design for a lateral SiGe HBT has been based on development studies of confined lateral selective epitaxial growth in cavities built into silicon-on-insulator wafers. A design process is described and modelled. Device simulations indicate devices with maximum fT of 22 GHz with peak gain of 95...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2004-06.
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| Subjects: | |
| Online Access: | Get fulltext |