Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001)
An investigation of the microscopic mechanisms of Ge self-assembling island growth is of great importance for future optoelectronic applications of quantum dot nanostructures. In this study, two sets of self-assembled germanium islands on Si (001) substrate, with and without preconditioning using a...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2005.
|
| Subjects: | |
| Online Access: | Get fulltext |