The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self-aligned link base
A study is made of 1/f noise in SiGe HBTs fabricated using selective growth of the Si collector and non-selective growth of the SiGe base and Si emitter cap. The transistors incorporate a self-aligned link base formed by BF2 implantation into the field oxide below the p+ polysilicon extrinsic base....
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2001-12.
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| Subjects: | |
| Online Access: | Get fulltext |