Hot-Carrier Stressing of NPN Polysilicon Emitter Bipolar Transistors Incorporating Fluorine
The effects of fluorine on the hot-carrier induced degradation in low-thermal-budget polysilicon emitter NPN bipolar transistors have been examined. Forward Gummel plots, base emitter (BE) diode characteristics, and stress currents were measured during reverse BE bias stress. Fluorinated devices beh...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2003-04.
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| Subjects: | |
| Online Access: | Get fulltext |