SiGe HBTs on Bonded Wafer Substrates
Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator substrates. The devices have application in low power, radio-frequency electronics. The transistors were fabricated on bonded substrates incorporating poly-Si filled, deeptrench isolation....
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
2001.
|
| Subjects: | |
| Online Access: | Get fulltext |