Characterisation of the effectiveness of carbon incorporation in SiGe for the elimination of parasitic energy barriers in SiGe HBT's
An electrical method is applied to SiGe and SiGeC HBTs to extract the bandgap narrowing in the base layer and to characterise the presence of parasitic energy barriers in the conduction band, arising from transient enhanced boron diffusion from the SiGe layer. It is shown that a background carbon co...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
1999.
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| Subjects: | |
| Online Access: | Get fulltext |