Analysis of thermionic emission from electrodeposited Ni-Si Schottky barriers
Ni-Si Schottky barriers are fabricated by electrodeposition using n on n+ Si substrates. I-V, C-V and low temperature I-V measurements are presented. A high-quality Schottky barrier with extremely low reverse leakage current is revealed. The results are shown to fit an inhomogeneous barrier model fo...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2006-12.
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| Subjects: | |
| Online Access: | Get fulltext |