Thermionic field emission at electrodeposited Ni-Si Schottky barriers
Current transport at Schottky barriers is of particular interest for spin injection and detection in semiconductors. Here, electrodeposited Ni-Si contacts are fabricated and the transport mechanisms through the formed Schottky barrier are studied. Highly doped Si is used to enable tunneling currents...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2008-07.
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| Subjects: | |
| Online Access: | Get fulltext |