Radiation-Induced Nucleation and Growth of CaSi2 Crystals, Both Directly during the Epitaxial CaF2 Growth and after the CaF2 Film Formation
The radiation-induced phenomena of CaSi2 crystal growth were investigated, both directly during the epitaxial CaF2 growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness, substrate temperature and radiation dose. Ir...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |