Anomalous PBTI Effects in N-Type Super Junction under High Gate Voltage Stress
In this work, an anomalous thick oxide-degradation phenomenon in n-type 650-V class super-junction VDMOS transistors is investigated. An unexpected threshold voltage (Vt) decrease was observed with high positive bias temperature instability stress, and the saturation current (IDsat) increases with t...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI
2022
|
| Subjects: | |
| Online Access: | View Fulltext in Publisher |