Electronic structure of InSb (001), (110), and (111)B surfaces

Electronic structure of InSb (001), (110), and (111)B surfaces

The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb was studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B ( 3 × 1 ) surface reconstruction is determined to be a disordered (111)B ( 3 × 3 ) surface reconstruction. The surface Fermi-level of t...

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Bibliographic Details
Main Authors: Dempsey, C.P (Author), Dong, J.T (Author), Inbar, H.S (Author), Palmstrøm, C.J (Author), Pendharkar, M. (Author), van Schijndel, T.A.J (Author), Young, E.C (Author)
Format: Article
Language:English
Published: AVS Science and Technology Society 2023
Subjects:
Antimony
Antimony compounds
Charge neutrality level
Conduction bands
Electron accumulation
Electron depletion
Electronic structure
Electronic.structure
Fermi level
Fermi level pinning
III-V semiconductors
Indium antimonides
Scanning tunneling microscopy
Scanning tunnelling microscopy and spectroscopy
Surface from
Surface reconstruction
Surfaces reconstruction
Valence band edges
Valence bands
Valence-band maximums
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