Gate Drive Circuit Suitable for a GaN Gate Injection Transistor
A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several studies in the literature have proposed the gate drive circuits with the speed...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Subjects: | |
| Online Access: | View Fulltext in Publisher View in Scopus |