Two inch diameter, highly conducting bulk β -Ga2O3single crystals grown by the Czochralski method

Two inch diameter, highly conducting bulk β -Ga2O3single crystals grown by the Czochralski method

Two inch diameter, highly conducting (Si-doped) bulk β-Ga2O3 single crystals with the cylinder length up to one inch were grown by the Czochralski method. The obtained crystals revealed high structural quality characterized by narrow x-ray rocking curves (FWHM ≤ 25 arc sec) and high surface smoothne...

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Bibliographic Details
Main Authors:	Bickermann, M. (Author), Bin Anooz, S. (Author), Chou, T.-S (Author), Dittmar, A. (Author), Galazka, Z. (Author), Ganschow, S. (Author), Grueneberg, R. (Author), Irmscher, K. (Author), Klimm, D. (Author), Kwasniewski, A. (Author), Pietsch, M. (Author), Popp, A. (Author), Schroeder, T. (Author), Seyidov, P. (Author), Straubinger, T. (Author), Suendermann, M. (Author)
Format:	Article
Language:	English
Published:	American Institute of Physics Inc. 2022
Subjects:	Atmospheric temperature Crystal growth from melt Device fabrications Electronics devices Electrons Free electrons concentration Gallium compounds Hall mobility Homoepitaxy Oxidizing atmosphere Silicon wafers Single crystals Structural qualities Substrates Surface smoothness Temperature-dependent electrical properties X ray rocking curve β -Ga2O3
Online Access:	View Fulltext in Publisher

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