Two inch diameter, highly conducting bulk β -Ga2O3single crystals grown by the Czochralski method

Two inch diameter, highly conducting bulk β -Ga2O3single crystals grown by the Czochralski method

Two inch diameter, highly conducting (Si-doped) bulk β-Ga2O3 single crystals with the cylinder length up to one inch were grown by the Czochralski method. The obtained crystals revealed high structural quality characterized by narrow x-ray rocking curves (FWHM ≤ 25 arc sec) and high surface smoothne...

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Bibliographic Details
Main Authors: Bickermann, M. (Author), Bin Anooz, S. (Author), Chou, T.-S (Author), Dittmar, A. (Author), Galazka, Z. (Author), Ganschow, S. (Author), Grueneberg, R. (Author), Irmscher, K. (Author), Klimm, D. (Author), Kwasniewski, A. (Author), Pietsch, M. (Author), Popp, A. (Author), Schroeder, T. (Author), Seyidov, P. (Author), Straubinger, T. (Author), Suendermann, M. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Atmospheric temperature
Crystal growth from melt
Device fabrications
Electronics devices
Electrons
Free electrons concentration
Gallium compounds
Hall mobility
Homoepitaxy
Oxidizing atmosphere
Silicon wafers
Single crystals
Structural qualities
Substrates
Surface smoothness
Temperature-dependent electrical properties
X ray rocking curve
β -Ga2O3
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