A perspective on electrical generation of spin current for magnetic random access memories
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical mechanisms of conversion of charge current to spin current ca...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2022
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| Subjects: | |
| Online Access: | View Fulltext in Publisher |