A hybrid density functional design of intermediate band semiconductor for photovoltaic application based on group IV elements (Si, Ge, Sn, and Pb)-doped CdIn2S4

A hybrid density functional design of intermediate band semiconductor for photovoltaic application based on group IV elements (Si, Ge, Sn, and Pb)-doped CdIn2S4

The CdIn2S4 semiconductor is considered a potential host for the implementation of intermediate band solar cells due to its ideal bandgap value and excellent photoelectric property. In this paper, the electronic structures of group IV elements (Si, Ge, Sn, and Pb)-doped CdIn2S4 have been investigate...

Full description

Bibliographic Details
Main Authors: Chen, P. (Author), Li, B. (Author), Tang, P. (Author), Zhang, H. (Author)
Format: Article
Language:English
Published: American Institute of Physics Inc. 2022
Subjects:
Band-gap values
Cadmium compounds
Efficiency
Electronic structure
Electronic.structure
Energy gap
Functional design
Germanium compounds
Group-IV
Hybrid density functional
Intermediate band semiconductor
Intermediate-band solar cells
Lead compounds
Light absorption
Photoelectric property
Photovoltaic applications
Semiconductor doping
Si/Ge
Silicon compounds
Solar power generation
Tin compounds
Online Access:View Fulltext in Publisher

Internet

View Fulltext in Publisher

Similar Items