Design of novel 3T ternary DRAM with single word-line using CNTFET

Design of novel 3T ternary DRAM with single word-line using CNTFET

Ternary logic system is the most promising and pursued alternative to the prevailing binary logic systems due to the energy efficiency of circuits following reduced circuit complexity and chip area. In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3 T-DRAM) cell u...

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Bibliographic Details
Main Authors: Ahmed, F.U (Author), Chowdhury, M.H (Author), Sandhie, Z.T (Author)
Format: Article
Language:English
Published: Elsevier Ltd 2022
Subjects:
Bit lines
Bit-line
Carbon nanotube field effect transistors
Carbon nanotubes
Carbon-nano-tube field effect transistor
Carbon-nano-tube field effect transistor (CNTFET)
Chirality
Computer circuits
Delay circuits
Dynamic random access memory
Dynamic random access storage
Dynamic random-access memory
Dynamic random-access memory (DRAM)
Energy efficiency
Integrated circuit design
Intelligent systems
Logic systems
Monte Carlo methods
Monte Carlo simulation
Monte Carlo's simulation
Sense amplifier
Single words
Ternary logic
Word-line
Yarn
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