Development of a Statistical Model for NPN Bipolar Transistor Mismatch
"Due to the high variation of critical device parameters inherent in integrated circuit manufacturing, modern integrated circuit designs have evolved to rely on the ratios of similar devices for their performance rather than on the absolute characteristics of any individual device. Today's...
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Digital WPI
2007
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| Online Access: | https://digitalcommons.wpi.edu/etd-theses/865 https://digitalcommons.wpi.edu/cgi/viewcontent.cgi?article=1864&context=etd-theses |