Origin Of Growth Twins During Czochralski Growth Of Heavily Doped, Dislocation-Free Single Crystal Silicon
Low voltage power electronics are made from dislocation free silicon heavily doped with arsenic or antimony to provide low electrical resistivity. Attempts to grow crystals with decreased resistivity have led to a higher probability of twinning during growth, so that the crystal no longer possesses...
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Digital WPI
2019
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| Online Access: | https://digitalcommons.wpi.edu/etd-dissertations/514 https://digitalcommons.wpi.edu/cgi/viewcontent.cgi?article=1513&context=etd-dissertations |