Electron – phonon interaction in multiple channel GaN based HFETs: Heat management optimization

Electron – phonon interaction in multiple channel GaN based HFETs: Heat management optimization

New power applications for managing increasingly higher power levels require that more heat be removed from the power transistor channel. Conventional treatments for heat dissipation do not take into account the conversion of excess electron energy into longitudinal optical (LO) phonons, whose assoc...

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Bibliographic Details
Main Author: Ferreyra, Romualdo A
Format: Others
Published: VCU Scholars Compass 2014
Subjects:
AlGaN
InAlN
Mutiple channel
HFET
High Temperature
Reliability
Electrical and Computer Engineering
Electrical and Electronics
Electronic Devices and Semiconductor Manufacturing
Nanotechnology Fabrication
Online Access:http://scholarscompass.vcu.edu/etd/3636
http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=4651&context=etd

Internet

http://scholarscompass.vcu.edu/etd/3636
http://scholarscompass.vcu.edu/cgi/viewcontent.cgi?article=4651&context=etd

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