Investigation of the Effects of Compressive Uniaxial Stress on the Hole Carriers in P-type InSb
The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples of InSb at 77 K, 64 K, and 12 K are reported. Unilaxial compressions as high as 6 kbar were applied to samples oriented in the {001} and {110} directions. The net hole concentration of the samples were...
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| Format: | Others |
| Language: | English |
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North Texas State University
1975
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc935820/ |