Fundamental Studies of Copper Corrosion in Interconnect Fabrication Process and Spectroscopic Investigation of Low-k Structures

• Main Author: Goswami, Arindom
• Other Authors: Chyan, Oliver Ming-Ren
• Format: Others
• Language: English
• Published: University of North Texas 2015
• Subjects: copper corrosion; low-k damage; MIR-IR metrology; Copper > Corrosion.; Chemical mechanical planarization.; Pyrazoles.; Azoles.; Dielectrics > Spectra.
• Online Access: https://digital.library.unt.edu/ark:/67531/metadc822794/

In the first part of this dissertation, copper bimetallic corrosion and its inhibition in cleaning processes involved in interconnect fabrication is explored. In microelectronics fabrication, post chemical mechanical polishing (CMP) cleaning is required to remove organic contaminants and particles left on copper interconnects after the CMP process. Use of cleaning solutions, however, causes serious reliability issues due to corrosion and recession of the interconnects. In this study, different azole compounds are explored and pyrazole is found out to be a potentially superior Cu corrosion inhibitor, compared to the most widely used benzotriazole (BTA), for tetramethyl ammonium hydroxide (TMAH)-based post CMP cleaning solutions at pH 14. Micropattern corrosion screening results and electrochemical impedance spectroscopy (EIS) revealed that 1 mM Pyrazole in 8 wt% TMAH solution inhibits Cu corrosion more effectively than 10 mM benzotriazole (BTA) under same conditions. Moreover, water contact angle measurement results also showed that Pyrazole-treated Cu surfaces are relatively hydrophilic compared to those treated with BTA/TMAH. X-ray photoelectron spectroscopy (XPS) analysis supports Cu-Pyrazole complex formation on the Cu surface. Overall Cu corrosion rate in TMAH-based highly alkaline post CMP cleaning solution is shown to be considerably reduced to less than 1Å/min by addition of 1 mM Pyrazole. In the second part, a novel technique built in-house called multiple internal Reflection Infrared Spectroscopy (MIR-IR) was explored as a characterization tool for characterization of different low-k structures.In leading edge integrated circuit manufacturing, reduction of RC time delay by incorporation of porous ultra low-k interlayer dielectrics into Cu interconnect nanostructure continues to pose major integration challenges. The main challenge is that porous structure renders interlayer dielectrics mechanically weak, chemically unstable and more susceptible to the RIE plasma etching damages. Besides the challenge of handling weak porous ultra low-k materials, a lack of sensitive metrology to guide systematic development of plasma etching, restoration and cleaning processes is the major stumbling block. We explored Multiple Internal Reflection Infrared Spectroscopy and associated IR techniques as a sensitive (sub-5 nm) characterization tool to investigate chemical bonding modification across fluorocarbon etch residues and low-k dielectric interface after plasma etching, ashing, UV curing and post-etch cleaning. The new insights on chemical bonding transformation mapping can effectively guide the development of clean-friendly plasma etch for creating ultra low-k dielectric nanostructures with minimal dielectric damages.