Ion-Induced Damage In Si: A Fundamental Study of Basic Mechanisms over a Wide Range of Implantation Conditions
A new understanding of the damage formation mechanisms in Si is developed and investigated over an extended range of ion energy, dose, and irradiation temperature. A simple model for dealing with ion-induced damage is proposed, which is shown to be applicable over the range of implantation conditio...
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| Format: | Others |
| Language: | English |
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University of North Texas
2006
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc5248/ |