A Novel Process for GeSi Thin Film Synthesis
A unique process of fabricating a strained layer GexSi1-x on insulator is demonstrated. Such strained heterostructures are useful in the fabrication of high-mobility transistors. This technique incorporates well-established silicon processing technology e.g., ion implantation and thermal oxidation....
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| Format: | Others |
| Language: | English |
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University of North Texas
2007
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc5167/ |