Measurement of Lattice Strain and Relaxation Effects in Strained Silicon Using X-ray Diffraction and Convergent Beam Electron Diffraction
The semiconductor industry has decreased silicon-based device feature sizes dramatically over the last two decades for improved performance. However, current technology has approached the limit of achievable enhancement via this method. Therefore, other techniques, including introducing stress into...
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| Format: | Others |
| Language: | English |
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University of North Texas
2007
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| Online Access: | https://digital.library.unt.edu/ark:/67531/metadc3978/ |