Surface and Interfacial Studies of Metal-Organic Chemical Vapor Deposition of Copper

• Main Author: Nuesca, Guillermo M.
• Other Authors: Kelber, Jeffry Alan, 1952-
• Format: Others
• Language: English
• Published: University of North Texas 1997
• Subjects: Copper; Vapor deposition; Chemical vapor deposition.; Copper.
• Online Access: https://digital.library.unt.edu/ark:/67531/metadc278058/

The nucleation and successful growth of copper (Cu) thin films on diffusion barrier/adhesion promoter substrates during metal-organic chemical vapor deposition (MOCVD) are strongly dependent on the initial Cu precursor-substrate chemistry and surface conditions such as organic contamination and oxidation. This research focuses on the interactions of bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II), [Cu(hfac)2], with polycrystalline tantalum (Ta) and polycrystalline as well as epitaxial titanium nitride (TiN) substrates during Cu MOCVD, under ultra-high vacuum (UHV) conditions and low substrate temperatures (T < 500 K). The results obtained from X-ray photoelectron spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Temperature Programmed Desorption (TPD) measurements indicate substantial differences in the chemical reaction pathways of metallic Cu formation from Cu(hfac)2 on TiN versus Ta surfaces.