A New Approach for Transition Metal Free Magnetic Sic: Defect Induced Magnetism After Self-ion Implantation

SiC has become an attractive wide bandgap semiconductor due to its unique physical and electronic properties and is widely used in high temperature, high frequency, high power and radiation resistant applications. SiC has been used as an alternative to Si in harsh environments such as in the oil ind...

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Bibliographic Details
Main Author: Kummari, Venkata Chandra Sekhar
Other Authors: Rout, Bibhudutta
Format: Others
Language:English
Published: University of North Texas 2013
Subjects:
Online Access:https://digital.library.unt.edu/ark:/67531/metadc271849/