Nonlinear Characterization and Modelling of GaN HEMTs for Microwave Power Amplifier Applications
Semiconductors technologies are rapidly evolving driven by the need for higher performance demanded by applications. Thanks to the numerous advantages that it offers, gallium nitride (GaN) is quickly becoming the technology of reference in the field of power amplification at high frequency. The R...
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| Format: | Doctoral Thesis |
| Language: | en |
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Alma Mater Studiorum - Università di Bologna
2013
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| Online Access: | http://amsdottorato.unibo.it/5774/ |