Physical models for numerical simulation of Si-based nanoscale FETs and sensors
To continuously improve the performance of metal-oxide-semiconductor field-effect-transistors (MOSFETs), innovative device architectures, gate stack engineering and mobility enhancement techniques are under investigation. In this framework, new physics-based models for Technology Computer-Aided-Desi...
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| Format: | Doctoral Thesis |
| Language: | en |
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Alma Mater Studiorum - Università di Bologna
2011
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| Online Access: | http://amsdottorato.unibo.it/3731/ |