Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects
The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new is...
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| Format: | Doctoral Thesis |
| Language: | en |
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Alma Mater Studiorum - Università di Bologna
2009
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| Online Access: | http://amsdottorato.unibo.it/1515/ |