Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy

Bibliographic Details
Main Author: Urban, Arne
Other Authors: Rizzi, Angela Prof. Dr.
Format: Doctoral Thesis
Language:English
Published: 2013
Subjects:
530
Online Access:http://hdl.handle.net/11858/00-1735-0000-0022-609E-3
http://nbn-resolving.de/urn:nbn:de:gbv:7-11858/00-1735-0000-0022-609E-3-3
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spelling ndltd-uni-goettingen.de-oai-ediss.uni-goettingen.de-11858-00-1735-0000-0022-609E-32014-01-03T04:58:05ZPosition-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxyA versatile approach towards semipolar GaN and the characterization of single nanocolumnsUrban, Arne530Physik (PPN621336750)molecular beam epitaxygallium nitridenanocolumnsselective area growthpolaritytransmission electron microscopyextended defectsthreading dislocationscathodoluminescencesemipolarRizzi, Angela Prof. Dr.2013-12-19T09:23:43Z2013-12-19T09:23:43Z2013-12-192013-11-29doctoralThesishttp://hdl.handle.net/11858/00-1735-0000-0022-609E-3urn:nbn:de:gbv:7-11858/00-1735-0000-0022-609E-3-3775113336eng
collection NDLTD
language English
format Doctoral Thesis
sources NDLTD
topic 530
Physik (PPN621336750)
molecular beam epitaxy
gallium nitride
nanocolumns
selective area growth
polarity
transmission electron microscopy
extended defects
threading dislocations
cathodoluminescence
semipolar
spellingShingle 530
Physik (PPN621336750)
molecular beam epitaxy
gallium nitride
nanocolumns
selective area growth
polarity
transmission electron microscopy
extended defects
threading dislocations
cathodoluminescence
semipolar
Urban, Arne
Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy
author2 Rizzi, Angela Prof. Dr.
author_facet Rizzi, Angela Prof. Dr.
Urban, Arne
author Urban, Arne
author_sort Urban, Arne
title Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy
title_short Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy
title_full Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy
title_fullStr Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy
title_full_unstemmed Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy
title_sort position-controlled selective area growth of ga-polar gan nanocolumns by molecular beam epitaxy
publishDate 2013
url http://hdl.handle.net/11858/00-1735-0000-0022-609E-3
http://nbn-resolving.de/urn:nbn:de:gbv:7-11858/00-1735-0000-0022-609E-3-3
work_keys_str_mv AT urbanarne positioncontrolledselectiveareagrowthofgapolargannanocolumnsbymolecularbeamepitaxy
AT urbanarne aversatileapproachtowardssemipolarganandthecharacterizationofsinglenanocolumns
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