Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy

Position-controlled selective area growth of Ga-polar GaN nanocolumns by molecular beam epitaxy

Bibliographic Details
Main Author: Urban, Arne
Other Authors: Rizzi, Angela Prof. Dr.
Format: Doctoral Thesis
Language:English
Published: 2013
Subjects:
530
Physik (PPN621336750)
molecular beam epitaxy
gallium nitride
nanocolumns
selective area growth
polarity
transmission electron microscopy
extended defects
threading dislocations
cathodoluminescence
semipolar
Online Access:http://hdl.handle.net/11858/00-1735-0000-0022-609E-3
http://nbn-resolving.de/urn:nbn:de:gbv:7-11858/00-1735-0000-0022-609E-3-3

Internet

http://hdl.handle.net/11858/00-1735-0000-0022-609E-3
http://nbn-resolving.de/urn:nbn:de:gbv:7-11858/00-1735-0000-0022-609E-3-3

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