Investigations into molecular beam epitaxial growth of InAs/GaSb superlattices
InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ability to tune the band gap over the entire mid and long wave infrared spectrum gives a large number of applications for devices made from InAs/GaSb superlattice material. The growth of high quality...
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| Language: | English |
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University of Iowa
2012
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| Online Access: | https://ir.uiowa.edu/etd/5029 https://ir.uiowa.edu/cgi/viewcontent.cgi?article=5029&context=etd |