Large-area and lumped element field-effect transistors for picosecond-scale detection in the Terahertz band and beyond
Because of inefficient sources and detectors, the Terahertz band (0.1 - 10 THz) located in between electronics with tens of Gigahertz (GHz) and optics with tens of Terahertz (THz) remained hardly accessible for a long time. Rapid advances in research and development of technology for emission and de...
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| Format: | Others |
| Language: | en |
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2019
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| Online Access: | https://tuprints.ulb.tu-darmstadt.de/9189/1/2019-10-14_Regensburger_Stefan.pdf Regensburger, Stefan <http://tuprints.ulb.tu-darmstadt.de/view/person/Regensburger=3AStefan=3A=3A.html> (2019): Large-area and lumped element field-effect transistors for picosecond-scale detection in the Terahertz band and beyond.Darmstadt, Technische Universität, [Ph.D. Thesis] |
Internet
https://tuprints.ulb.tu-darmstadt.de/9189/1/2019-10-14_Regensburger_Stefan.pdfRegensburger, Stefan <http://tuprints.ulb.tu-darmstadt.de/view/person/Regensburger=3AStefan=3A=3A.html> (2019): Large-area and lumped element field-effect transistors for picosecond-scale detection in the Terahertz band and beyond.Darmstadt, Technische Universität, [Ph.D. Thesis]