Field-effect transistors based on solution processed zinc tin oxide
Most of the transistors are based on inorganic semiconductors such as the ubiquitous silicon (Si). Nevertheless they have some problematic issues. First, their crystalline quality must be very high to guarantee good device properties. Second, in order to achieve the first point costly and demanding...
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| Format: | Others |
| Language: | en |
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2018
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| Online Access: | https://tuprints.ulb.tu-darmstadt.de/7209/1/Dissertation_Sykora.pdf Sykora, Reinhold Benedikt <http://tuprints.ulb.tu-darmstadt.de/view/person/Sykora=3AReinhold_Benedikt=3A=3A.html> (2018): Field-effect transistors based on solution processed zinc tin oxide.Darmstadt, Technische Universität, [Ph.D. Thesis] |
Internet
https://tuprints.ulb.tu-darmstadt.de/7209/1/Dissertation_Sykora.pdfSykora, Reinhold Benedikt <http://tuprints.ulb.tu-darmstadt.de/view/person/Sykora=3AReinhold_Benedikt=3A=3A.html> (2018): Field-effect transistors based on solution processed zinc tin oxide.Darmstadt, Technische Universität, [Ph.D. Thesis]