Radiation Effects on Semiconductor Devices in High Energy Heavy Ion Accelerators

• Main Author: Belousov, Anton
• Format: Others
• Language: English; en
• Published: 2014
• Online Access: https://tuprints.ulb.tu-darmstadt.de/4242/1/Thesis_CV_List_final3.pdf; Belousov, Anton <http://tuprints.ulb.tu-darmstadt.de/view/person/Belousov=3AAnton=3A=3A.html> (2014): Radiation Effects on Semiconductor Devices in High Energy Heavy Ion Accelerators.Darmstadt, Technische Universität, [Ph.D. Thesis]

Radiation effects on semiconductor devices in GSI Helmholtz Center for Heavy Ion Research are becoming more and more significant with the increase of beam intensity due to upgrades. Moreover a new accelerator is being constructed on the basis of GSI within the project of facility for antiproton and ion research (FAIR). Beam intensities will be increased by factor of 100 and energies by factor of 10. Radiation fields in the vicinity of beam lines will increase more than 2 orders of magnitude and so will the effects on semiconductor devices. It is necessary to carry out a study of radiation effects on semiconductor devices considering specific properties of radiation typical for high energy heavy ion accelerators. Radiation effects on electronics in accelerator environment may be divided into two categories: short-term temporary effects and long-term permanent degradation. Both may become critical for proper operation of some electronic devices. This study is focused on radiation damage to CCD cameras in radiation environment of heavy ion accelerator. Series of experiments with irradiation of devices under test (DUTs) by secondary particles produced during ion beam losses were done for this study. Monte Carlo calculations were performed to simulate the experiment conditions and conditions expected in future accelerator. Corresponding comparisons and conclusions were done. Another device typical for accelerator facilities - industrial Ethernet switch was tested in similar conditions during this study. Series of direct irradiations of CCD and MOS transistors with heavy ion beams were done as well. Typical energies of the primary ion beams were 0.5-1 GeV/u. Ion species: from Na to U. Intensities of the beam up to 1e9 ions/spill with spill length of 200-300 ns. Criteria of reliability and lifetime of DUTs in specific radiation conditions were formulated, basing on experimental results of the study. Predictions of electronic device reliability and lifetime were formulated for radiation conditions expected in future at FAIR, basing on Monte Carlo simulations. In addition to main results a new type of CCD-based beam loss monitor (BLM) was proposed and discussed.