Radiation Effects on Semiconductor Devices in High Energy Heavy Ion Accelerators
Radiation effects on semiconductor devices in GSI Helmholtz Center for Heavy Ion Research are becoming more and more significant with the increase of beam intensity due to upgrades. Moreover a new accelerator is being constructed on the basis of GSI within the project of facility for antiproton and...
| Main Author: | |
|---|---|
| Format: | Others |
| Language: | English en |
| Published: |
2014
|
| Online Access: | https://tuprints.ulb.tu-darmstadt.de/4242/1/Thesis_CV_List_final3.pdf Belousov, Anton <http://tuprints.ulb.tu-darmstadt.de/view/person/Belousov=3AAnton=3A=3A.html> (2014): Radiation Effects on Semiconductor Devices in High Energy Heavy Ion Accelerators.Darmstadt, Technische Universität, [Ph.D. Thesis] |
Internet
https://tuprints.ulb.tu-darmstadt.de/4242/1/Thesis_CV_List_final3.pdfBelousov, Anton <http://tuprints.ulb.tu-darmstadt.de/view/person/Belousov=3AAnton=3A=3A.html> (2014): Radiation Effects on Semiconductor Devices in High Energy Heavy Ion Accelerators.Darmstadt, Technische Universität, [Ph.D. Thesis]