The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration
Development of semiconductor technology over the last five decades has led to aggressive scaling down of integrated circuit (IC) device dimensions. ICs have become faster, denser and more power-efficient by continuous shrinking down of the metal-oxide-semiconductor field-effect transistor (MOSFET) s...
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| Format: | Others |
| Language: | English en |
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2012
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| Online Access: | http://tuprints.ulb.tu-darmstadt.de/2931/1/PhD_Thesis.pdf Stefanov, Yordan <http://tuprints.ulb.tu-darmstadt.de/view/person/Stefanov=3AYordan=3A=3A.html> : The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration. Technische Universität, Darmstadt [Ph.D. Thesis], (2012) |
Internet
http://tuprints.ulb.tu-darmstadt.de/2931/1/PhD_Thesis.pdfStefanov, Yordan <http://tuprints.ulb.tu-darmstadt.de/view/person/Stefanov=3AYordan=3A=3A.html> : The Application of Atomic Force Microscopy in Semiconductor Technology - Towards High-K Gate Dielectric Integration. Technische Universität, Darmstadt [Ph.D. Thesis], (2012)