Approaching metal oxide high-k dielectrics and semiconductors by solution-processing of molecular precursors

Approaching metal oxide high-k dielectrics and semiconductors by solution-processing of molecular precursors

Functional metal oxide semiconductors (MOS) and high-k dielectrics possess a tremendous potential to replace the conventional silicon/silicon dioxide material combination for next-generation electronics, due to the realization of low-voltage operations and enhanced TFT performance characteristics. T...

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Bibliographic Details
Main Author: Koslowski, Nico
Format: Others
Language:en
Published: 2021
Online Access:https://tuprints.ulb.tu-darmstadt.de/19379/1/Dissertation_Nico%20Koslowski.pdf
Koslowski, Nico <http://tuprints.ulb.tu-darmstadt.de/view/person/Koslowski=3ANico=3A=3A.html> (2021):Approaching metal oxide high-k dielectrics and semiconductors by solution-processing of molecular precursors. (Publisher's Version)Darmstadt, Technische Universität, DOI: 10.26083/tuprints-00019379 <https://doi.org/10.26083/tuprints-00019379>, [Ph.D. Thesis]

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https://tuprints.ulb.tu-darmstadt.de/19379/1/Dissertation_Nico%20Koslowski.pdf
Koslowski, Nico <http://tuprints.ulb.tu-darmstadt.de/view/person/Koslowski=3ANico=3A=3A.html> (2021):Approaching metal oxide high-k dielectrics and semiconductors by solution-processing of molecular precursors. (Publisher's Version)Darmstadt, Technische Universität, DOI: 10.26083/tuprints-00019379 <https://doi.org/10.26083/tuprints-00019379>, [Ph.D. Thesis]

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