Ultra Small SOI DG MOSFETs and RF MEMS Applications
The continuous scaling-down process of the channel length over the last four decades is reaching its limits in terms of gate oxide thickness, short channel effects and power consumptions, all the above issues driving increased leakage currents. The dual gate SOI CMOSFET devices are expected to repla...
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| Format: | Others |
| Language: | English en |
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2009
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| Online Access: | https://tuprints.ulb.tu-darmstadt.de/1387/1/Final_Thesis_Oana_Cobianu.pdf Cobianu, Oana Mihaela <http://tuprints.ulb.tu-darmstadt.de/view/person/Cobianu=3AOana_Mihaela=3A=3A.html> (2009): Ultra Small SOI DG MOSFETs and RF MEMS Applications.Darmstadt, Technische Universität, [Ph.D. Thesis] |