Étude de l’Epitaxie Localisée de GaN par Transport Vapeur / Liquide / Solide (VLS)

Étude de l’Epitaxie Localisée de GaN par Transport Vapeur / Liquide / Solide (VLS)

L'objectif de ce travail a été de comprendre les mécanismes menant à la formation de Nitrure de Gallium monocristallin ( GaN ) sur substrat de silicium par croissance cristalline en configuration Vapeur-Liquide-Solide (VLS), à partir d'une phase liquide de gallium, dans la perspective d�...

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Bibliographic Details
Main Author:	Berckmans, Stéphane
Other Authors:	Lyon
Language:	fr
Published:	2016
Subjects:	Hetero-épitaxie Mécanisme VLS Gallium GaN Substrat de silicium 3C-SiC Hetero-epitaxy VLS mecanism Silicone substrate 620.11
Online Access:	http://www.theses.fr/2016LYSE1102/document

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