Intégration d'un film mince de Pb(Zr,Ti)O₃ dans une structure capacitive pour applications RF

Intégration d'un film mince de Pb(Zr,Ti)O₃ dans une structure capacitive pour applications RF

Les matériaux ferroélectriques suscitent beaucoup d’intérêt du fait de leurs propriétés physiques telles que la piézoélectricité, la ferroélectricité ou encore leur permittivité élevée. Ainsi, on cherche à les intégrer dans les micro- et nano-systèmes dans lesquels on les retrouve généralement sous...

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Bibliographic Details
Main Author:	Jégou, Carole
Other Authors:	Paris 11
Language:	fr
Published:	2014
Subjects:	Pb(Zr,Ti)O₃ Couche mince Dépôt par ablation laser Ferroélectrique Constante diélectrique Courants de fuite Mécanisme de conduction Commutateurs MEMS RF Capacité Radiofréquence Thin film Pulsed laser deposition Ferroelectric Dielectric constant Leakage currents Conduction mechanism RF MEMS switches Capacitance Microwave
Online Access:	http://www.theses.fr/2014PA112322/document

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