Impact of Chemical States on the Effective Work Function of Metal Gate and High-kappa Dielectric Materials on Novel Heterostructures
An experimental and theoretical approach is taken to determine the effect of a heterojunction on the effective work function in a metal/high-? gate stack, the characteristics of aqueous hydrochloric acid cleaned (aq-HCl) GaN surface and the interface between GaN and Al2O3, HfO2 and GaON. The invest...
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| Format: | Others |
| Language: | en_US |
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2012
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| Online Access: | http://hdl.handle.net/1969.1/ETD-TAMU-2012-08-11414 |