Radiation Response of Strained Silicon-Germanium Superlattices
The purpose of this study is to investigate the role of strain in the accumulation of crystalline defects created by ion irradiation. Previous studies state that strained Si1xGex is more easily amorphized by ion irradiation than unstrained, bulk Si in a periodic superlattice structure; however, the...
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| Format: | Others |
| Language: | en_US |
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2011
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| Online Access: | http://hdl.handle.net/1969.1/ETD-TAMU-2010-05-8021 |