PHONON ENGINEERING OF SILICON NANOWIRES BY CONTROL DOPING, FIRST PRINCIPLE APPROACH
In this study, we have investigated the electronic and dynamical properties of several semiconductor nanowires with different diameters in the presence of impurities along the [111] direction. All of the nanowires are hydrogen-passivated and we have considered Germanium impurities with different pat...
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| Format: | Others |
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OpenSIUC
2012
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| Online Access: | https://opensiuc.lib.siu.edu/theses/916 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=1924&context=theses |