Atomistic Modeling of AlN/GaN HEMTs for Applications in Harsh Environments
AlN/GaN high-electron mobility transistors (HEMT) are subject to internal structural and electrostatic fields originating mainly from: (i) the fundamental crystal atomicity and the interface discontinuity between dissimilar materials, (ii) atomistic strain, (iii) piezoelectricity, and (iv) spontaneo...
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OpenSIUC
2011
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| Online Access: | https://opensiuc.lib.siu.edu/theses/572 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=1579&context=theses |