DESIGN AND NUMERICAL CHARACTERIZATION OF ULTRAFAST III-NITRIDE MULTIPLE-QUANTUM-DOTS-IN-NANOWIRE LASER AND ITS APPLICATIONS
Recently, nonpolar InGaN/GaN optoelectronic structures have been widely studied for applications in ultrafast communication, solid-state lighting, solar cell, sensing, photonic integrated circuits and quantum cryptography. When grown in a core-shell architecture (where the nonpolar, multiple disk ac...
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| Format: | Others |
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OpenSIUC
2019
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| Online Access: | https://opensiuc.lib.siu.edu/dissertations/1701 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=2705&context=dissertations |