DIFFUSIVE TRANSPORT IN MONOLAYER MOLYBDENUM DISULFIDE (MoS2) UNDER STRAIN
While silicon-based transistors approach their physical limit and naturally scaled-down 2D graphene layers have low ON/OFF current ratio due to zero bandgap, monolayer 2D molybdenum disulphide (MoS2) holds promise as channel material for future field-effect transistors (FETs) with a finite non-zero...
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| Format: | Others |
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OpenSIUC
2019
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| Online Access: | https://opensiuc.lib.siu.edu/dissertations/1665 https://opensiuc.lib.siu.edu/cgi/viewcontent.cgi?article=2669&context=dissertations |
| Summary: | While silicon-based transistors approach their physical limit and naturally scaled-down 2D graphene layers have low ON/OFF current ratio due to zero bandgap, monolayer 2D molybdenum disulphide (MoS2) holds promise as channel material for future field-effect transistors (FETs) with a finite non-zero energy bandgap and a high ON/OFF current ratio. Besides having a direct energy bandgap, strong covalent bond, high thermal stability, absence of dangling bonds, and an atomic scale thickness of 0.65 nm make MoS2 an excellent candidate for channel material. Recently, a research team at the Lawrence Berkeley National Laboratory has been able to demonstrate a 2-D MoS2-CNT (Carbon Nanotube) based transistor with a gate length of 1 nm. Also, MoS2 transistors operating at gigahertz frequencies (with a cutoff frequency of ~6 GHz) have been reported. Nevertheless, given the realistic construction of an FET with multiple contacts and interfaces, electron mobility in monolayer MoS2 is degraded by various scattering mechanisms. |
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